60 GHz monolithic GaAs front-end circuit for receiver applications
Abstract
A millimeter-wave planar mixer diode compatible with GaAs MESFET based integrated circuit fabrication has been developed. Selective ion implantation was used to optimize the diode and FET doping profiles. A novel feature reported here is the use of a deep implanted buried n(+) layer to minimize diode series resistance, yielding diode cutoff frequencies in excess of 500 GHz. Monolithic balanced mixer diodes integrated with an MESFET IF amplifier fabricated by this technique have given 5 dB conversion loss at 60 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1984
- DOI:
- 10.1049/el:19840226
- Bibcode:
- 1984ElL....20..334B
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Circuits;
- Millimeter Waves;
- Mixing Circuits;
- Field Effect Transistors;
- Frequency Response;
- Insertion Loss;
- Radio Receivers;
- Schottky Diodes;
- Signal Mixing;
- Electronics and Electrical Engineering