Monolithically integrated In(0.53)Ga(0.47)As-PIN/InP-MISFET photoreceiver
Abstract
In(0.53)Ga(0.47)As PIN photodiode and InP MISFET were monolithically integrated on an Fe-doped semi-insulating InP substrate. Photoreceiver sensitivities were measured at 100 Mbit/s NRZ pseudorandom signals.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1984
- DOI:
- 10.1049/el:19840213
- Bibcode:
- 1984ElL....20..314K
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Phosphides;
- Integrated Optics;
- Mis (Semiconductors);
- Photodiodes;
- Fiber Optics;
- Indium Arsenides;
- Optical Communication;
- P-I-N Junctions;
- Photosensitivity;
- Pseudorandom Sequences;
- Receivers;
- Electronics and Electrical Engineering