Selectively doped n/+/ InP/n/-/ GaInAs heterostructure prepared using chloride transport vapour-phase epitaxy
Abstract
A field-effect transistor with a 2-micron Au gate was fabricated on a selectively doped InP/GaInAs heterostructure grown using chloride transport vapor-phase epitaxy. Complete pinch-off was observed, and transconductances of 90 and 160 mS/mm were measured at 295 and 77 K, respectively. From an analysis of the drain I/ V characteristic, two-dimensional electron gas at the interface was revealed to be the dominant factor for the channel current. This is the first report of a successful preparation of an n/+/ InP/n/-/ GaInAs heterostructure for the selectively doped field-effect transistor.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1984
- DOI:
- 10.1049/el:19840209
- Bibcode:
- 1984ElL....20..306T
- Keywords:
-
- Doped Crystals;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Indium Phosphides;
- Vapor Phase Epitaxy;
- Volt-Ampere Characteristics;
- Carrier Density (Solid State);
- Fabrication;
- Indium Arsenides;
- Low Noise;
- Saturation;
- Electronics and Electrical Engineering