High-efficiency V-band GaAs IMPATT diodes
Abstract
Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1984
- DOI:
- Bibcode:
- 1984ElL....20..212M
- Keywords:
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- Avalanche Diodes;
- Extremely High Frequencies;
- Gallium Arsenides;
- Microwave Equipment;
- Power Gain;
- Energy Conversion Efficiency;
- Heat Sinks;
- Molecular Beam Epitaxy;
- Thermal Resistance;
- Electronics and Electrical Engineering