InGaAs PIN photodiode fabricated on semi-insulating InP substrate for monolithic integration

A low-dark-current high-speed InGaAs PIN photodiode suitable for optoelectronic monolithic integration has been fabricated by LPE method on semiinsulating InP substrate. The photodiode has the lowest reported dark current density of 2.5 x 10 to the -6th A/sq cm at -10 V in this material system. At the operating voltage of -5 V, an external quantum efficiency of more than 90 percent at 1.3 microns and greater than 83 percent at 1.55 microns, a rise time of less than 35 ps and an FWHM of less than 45 ps have been measured.