Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode
Abstract
The successful fabrication of submicrometer channel length (0.75 micron) and gate length (0.15 micron) vertical electron transistors with AlGaAs cathodes is reported. Lack of electron velocity enhancement has been proposed to be due to high operating channel temperatures, and low temperature measurements were hindered by carrier freeze-out.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1984
- DOI:
- Bibcode:
- 1984ElL....20..145M
- Keywords:
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- Aluminum Gallium Arsenides;
- Cathodes;
- Gallium Arsenides;
- Heterojunction Devices;
- Junction Transistors;
- Fabrication;
- N-N Junctions;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering