Investigation of HgCdTe photodiodes by electron-beam induced voltage technique
Abstract
Experimental results obtained by observing photodiode responsivity profiles and p-n junction depletion regions by means of the electron-beam induced voltage technique are presented. Measurements of minority-carrier diffusion length have been made on Schottky barrier diodes formed on p-type HgCdTe.
- Publication:
-
Chinese Journal of Infrared Research
- Pub Date:
- December 1984
- Bibcode:
- 1984ChJIR...3..133T
- Keywords:
-
- Electric Potential;
- Electron Beams;
- Mercury Cadmium Tellurides;
- Photodiodes;
- Diffusion Length;
- Minority Carriers;
- P-N Junctions;
- Schottky Diodes;
- Electronics and Electrical Engineering