Surface treatment of (11¯02) sapphire and (100) silicon for molecular beam epitaxial growth
Abstract
A low-temperature surface preparation technique for molecular beam epitaxial growth of silicon on sapphire and silicon is described. Thermal desorption of regrown oxide has been accomplished at 850 °C and epitaxial growth at 650 °C. A comparison of two surface treatment techniques for silicon (100) and sapphire (11¯02) substrates is reported.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 1984
- DOI:
- 10.1063/1.94889
- Bibcode:
- 1984ApPhL..44..796C
- Keywords:
-
- Desorption;
- Molecular Beam Epitaxy;
- Sapphire;
- Silicon;
- Sos (Semiconductors);
- Surface Finishing;
- Aluminum;
- Electron Spectroscopy;
- Field Effect Transistors;
- Lattice Parameters;
- Vacuum;
- X Ray Spectra;
- Solid-State Physics