High quality Hg(1-x)Cd(x)Te epitaxial layers by the organometallic process
Abstract
An organometallic process for the epitaxial growth of Hg(1-x)Cd(x)Te is described in this letter. This process involves the simultaneous pyrolysis of dimethylcadmium and diethyltelluride in mercury vapor at 415 C, using hydrogen as the carrier gas. It is shown this process results in device quality layers of uniform composition. Layers with x = 0.17 exhibited n-type conduction, with an approximate carrier concentration of 3.8 times 10 to the 15th/cu cm, and a Hall mobility of 245,000 sq cm/Vs at 77 K. Thus, they are comparable to the best grown by liquid phase epitaxy. A p-type layer, with anomalous electrical characteristics, has also been described in this letter. Reasons for these anomalous characteristics are outlined briefly.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 1984
- DOI:
- 10.1063/1.94916
- Bibcode:
- 1984ApPhL..44..779G
- Keywords:
-
- Carrier Density (Solid State);
- Carrier Mobility;
- Epitaxy;
- Hall Effect;
- Mercury Cadmium Tellurides;
- Pyrolysis;
- Vapor Deposition;
- Fabrication;
- Organometallic Compounds;
- Quality Control;
- Temperature Dependence;
- Solid-State Physics