A new Q switching method by intracavity phase modulation in a semiconductor laser
Abstract
A new Q switching method for a semiconductor laser is proposed that uses an intracavity phase modulation due to the electro-optic effect. It consists of an amplifier and two phase modulators driven by a microwave signal in a branching waveguide structure. It is predicted that under Q switching a pulse width of less than 100 ps with an intense peak power of a few watts is obtainable even with dc injection current slightly larger than the threshold by applying a microwave reverse bias voltage to the phase modulators.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 1984
- Bibcode:
- 1984ApPhL..44..571W
- Keywords:
-
- Electro-Optical Effect;
- Laser Cavities;
- Phase Modulation;
- Q Switched Lasers;
- Semiconductor Lasers;
- Waveguide Lasers;
- Pulse Duration;
- Time Dependence;
- Lasers and Masers