We present results of a new model to realistically describe the steady-state photoconductivity in amorphous silicon alloys. The room temperature photoconductivity is very dependent on the position of the dark Fermi level and the sensitization is a consequence of both a change in the recombination path and dopant created gap states. We also demonstrate the relationship between the power dependence of photoconductivity and dark Fermi level position and show that as a result of space charge neutrality, this dependence can be related to a characteristic energy slope of the density of states only in the absence of injected charge or dopants. Moreover, in agreement with recent experimental data, we show that our model predicts a power dependence of less than 0.5 for high intensity illumination on n-type amorphous silicon. Finally we examine the temperature dependence of photoconductivity and find good agreement between our theory and experimental results.