Photoconductivity and recombination in amorphous silicon alloys
Abstract
We present results of a new model to realistically describe the steady-state photoconductivity in amorphous silicon alloys. The room temperature photoconductivity is very dependent on the position of the dark Fermi level and the sensitization is a consequence of both a change in the recombination path and dopant created gap states. We also demonstrate the relationship between the power dependence of photoconductivity and dark Fermi level position and show that as a result of space charge neutrality, this dependence can be related to a characteristic energy slope of the density of states only in the absence of injected charge or dopants. Moreover, in agreement with recent experimental data, we show that our model predicts a power dependence of less than 0.5 for high intensity illumination on n-type amorphous silicon. Finally we examine the temperature dependence of photoconductivity and find good agreement between our theory and experimental results.
- Publication:
-
Optical Effects in Amorphous Semiconductors
- Pub Date:
- October 1984
- DOI:
- 10.1063/1.34771
- Bibcode:
- 1984AIPC..120...40H
- Keywords:
-
- 72.40.+w;
- 72.20.Jv;
- 71.25.Mg;
- Photoconduction and photovoltaic effects;
- Charge carriers: generation recombination lifetime and trapping