Wideband monolithic microwave amplifier study
Abstract
Work is continued on the analysis and design of GaAs FET distributed amplifiers. Design tradeoffs are established for type of device, number of devices, gain, impedance level and line cutoff frequency. The procedure for achieving the maximum gain-bandwidth product is detailed. Preliminary work on a broadband 0-360 degrees phase shifter is reported. The design of an integral part of the phase shifter, a distributed paraphase amplifier from 2 - 20 GHz, is presented.
- Publication:
-
Final Technical Report
- Pub Date:
- September 1983
- Bibcode:
- 1983wisc.rept.....B
- Keywords:
-
- Bandwidth;
- Distributed Amplifiers;
- Gallium Arsenides;
- Microwave Amplifiers;
- Phase Shift Circuits;
- Amplification;
- Broadband Amplifiers;
- Computer Programs;
- Extremely High Frequencies;
- Field Effect Transistors;
- Impedance;
- Integrated Circuits;
- Losses;
- Optimization;
- Sensitivity;
- Superhigh Frequencies;
- Transmission Lines;
- Ultrahigh Frequencies;
- Instrumentation and Photography