Predevelopment of IR-CCD components

Infrared charge coupled devices (IR-CCD) from extrinsic silicon are described. A 150 picture element monolithic line sensor was developed. Indium doped silicon substrates of 100 orientation, 1 to 2 x 10 to the 17th power/cucm concentration and 500 micron thickness were used. The measured black body responsitivity of the detectors lies in the 100 A/W range (50 K, 1000 V/cm) and the corresponding detectivity at 10 to the 11th power cm/sq root s/W. To optimize the system the electrical properties of surface, bulk and profile CCD's were tested as a function of temperature. At 50 K, the operating temperature of In doped Si, BCCD's is the best solution. The picture element size of the line sensor was 15 micron x 30 micron. The pitch was 60 micron. The transfer structure to inject the photocharge from the detector into the CCD register can do antiblooming and skimming. The homogeneity of the responsivity of the line sensor is 5%.