Development of technology, circuit design and simulation procedures for Very Large Scale Integration (VLSI) systems, volume 1

Technology, computer aided design (CAD) and testing aspects of VLSI circuit manufacture are described. Etching, deposition, oxidation, doping and gettering step for a NMOS silicon gate technology are covered. Layout structures, the development of basic cells, and design systems with timing and logic simulation aiming at a closed CAD system from layout to testing are treated. The design of easily testable circuits and the generation of test programs are considered.