GaAs FET logic at low temperatures
Abstract
This report covers progress made to investigate the speed advantage associated with the operation of GaAs integrated circuits at low temperatures (77 K). The work was carried out in conjunction with a TI internally-funded program to develop a viable, room-temperature, high-speed GaAs logic technology. In Section 2, material development is discussed. Process development and circuit development are discussed in Sections 3 and 4, respectively. The principal results of this investigation, the temperature characteristics of GaAs MESFET devices and circuits, are described in Section 5.
- Publication:
-
Final Technical Report
- Pub Date:
- August 1983
- Bibcode:
- 1983ti...rept.....N
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Logic Circuits;
- Cryogenics;
- Fabrication;
- Low Temperature;
- Room Temperature;
- Electronics and Electrical Engineering