Pin diode for phased array radar applications - A study on the effects of diode geometry
Abstract
The paper presents the relative magnitudes of the axial and transverse currents in PIN diodes. The geometry dependence of these current components analyzed and their role in deciding the excess carrier lifetime is discussed. The paper includes the evaluation of the maximum RF current that can be pumped into the diode under forward bias conditions. It is shown that the geometry of the diode can limit this current capability for a given d.c. current.
- Publication:
-
International Radar Symposium
- Pub Date:
- October 1983
- Bibcode:
- 1983rad..symp..139B
- Keywords:
-
- P-I-N Junctions;
- Phased Arrays;
- Radar Equipment;
- Semiconductor Diodes;
- Carrier Lifetime;
- Carrier Transport (Solid State);
- Current Distribution;
- Direct Current;
- Electronics and Electrical Engineering