Refractive index of ternary and quaternary compound semiconductors below the fundamental absorption edge: Linear and nonlinear effects
Abstract
The index of refraction n is calculated as a function of frequency and mole fraction x for the following compounds: Hg/sub 1x/Cd/sub x/Te, Al/sub x/Ga/sub 1x/As, and In/sub 1x/Ga/sub x/As/sub y/P/sub 1x/ lattice matched to InP. Lattice matching of In/sub 1x/Ga/sub x/As/sub y/P/sub 1y/ to InP requires that x = 0.466 y. The theoretical result for the refractive index is obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. It is given in terms of the basic material parameters of band gap energy, effective electron mass m/sub n/, effective heavy hole mass m/sub p/, spin orbit splitting energy, lattice constant, and carrier concentration n/sub e/ or p for n type or p type materials, respectively. If these quantities are known as functions of mole fraction x, there are no adjustable parameters involved. A negative change in the refractive index near the fundamental absorption edge is predicted on passing radiation through a crystal if the change in carrier concentration of the initially unoccupied conduction band is assumed proportional to internal intensity 1.
 Publication:

Presented at the Symp. on Opt. Mater. for High Power Lasers
 Pub Date:
 1983
 Bibcode:
 1983omhp.symp.....J
 Keywords:

 Energy Gaps (Solid State);
 Quantum Mechanics;
 Refractivity;
 Semiconductors (Materials);
 Aluminum Alloys;
 Cadmium Tellurides;
 Chemical Composition;
 Gallium Arsenides;
 Gallium Phosphides;
 Indium Arsenides;
 Indium Phosphides;
 Lasers and Masers