Microwave receiver technology for space systems
Abstract
The present and projected technology of low-noise receivers for space systems is presented. The GaAs FET amplifier wil be used up to approximately 50 GHz and will replace the parametric amplifier and tunnel diode amplifier. A mixer followed by a low-noise GaAs FET amplifier will be used for frequencies higher than 50 GHz. Noise temperatures of the GaAs FET amplifier and mixer/GaAs FET amplifier receivers can be reduced by a factor of more than 2 by cooling. Physical temperatures of 150 K can be achieved by passive cooling techniques.
- Publication:
-
NTC 1983; Proceedings of the National Telesystems Conference
- Pub Date:
- 1983
- Bibcode:
- 1983ntc..conf...39M
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Low Noise;
- Microwave Amplifiers;
- Radio Receivers;
- Space Communication;
- Amplifier Design;
- Cooling Systems;
- Mixing Circuits;
- Noise Temperature;
- Parametric Amplifiers;
- Tunnel Diodes;
- Electronics and Electrical Engineering