Plasma-initiated laser deposition of polycrystalline and monocrystalline silicon films

Silicon deposition using the interaction between the radiation from a pulsed ultraviolet excimer laser and the plasma species produced in a glow discharge in silicane is described. Examination of the deposited film by laser Raman spectroscopy and by transmission electron microscopy reveals that the morphology ranged from polycrystalline silicon at laser fluences of 0.13 to 0.17 J/sq cm to epitaxial silicon at fluences of 0.4 to 0.6 J/sq cm. Growth rates of 100 nm/min for polycrystalline silicon and 30 nm/min for monocrystalline silicon were achieved.