Physicochemical principles of the vapor-phase epitaxy of gallium arsenide
Abstract
The mechanisms of the vapor-phase epitaxy of gallium arsenide in the system trimethyl gallium-arsine-hydrogen are investigated. It is shown that the chemical mechanism of the process is a homogeneous reaction between trimethyl gallium and arsine, which produces clusters with gallium and arsenic atoms in the vapor phase. Epitaxial growth is limited by diffusive mass transfer. Based on the theory of the convective diffusion of clusters toward the growing surface, equations are obtained for the layer growth rate as a function of the crystallization conditions. A model describing the formation of impurity segregations and their properties is proposed.
- Publication:
-
Materials of Electronic Technology. Part 1 - Physical-Chemical Principles of the Synthesis Methods
- Pub Date:
- 1983
- Bibcode:
- 1983metp.rept...24F
- Keywords:
-
- Gallium Arsenides;
- Physical Chemistry;
- Semiconductors (Materials);
- Vapor Phase Epitaxy;
- Chemical Reactions;
- Mass Transfer;
- Methyl Compounds;
- Microstructure;
- Morphology;
- Rates (Per Time);
- Solid-State Physics