Low noise amplifiers above 18 GHz

Noise reduction in ground stations operating above 18 GHz are explored in terms of current limitations in device, measurement and circuit technology and progress on a low noise amplifier. GaAs FETs have, as of 1982, reached a level of 1.55 dB noise and 12.3 dB gain. The devices include a 75 micron gate width and sub-quarter micron gate length. The noise figures are thus far determined in the 20-22 GHz range. A balanced microstrip circuit 0.65 x 0.51 cm in size featuring Lange couplers, input and output matching circuits, quarter wavelength bias chokes and TaN resistor bias networks has been developed for VSWR and cascading stages applications. The amplifier, in a two-stage configuration, has furnished a bandwidth of 12-22 GHz.