Development of short gate FET's
Abstract
Annual results on research for development of short gate FET's is reported. High material purity was obtained on in house liquid phase and vapor phase reactors. Quarter micron metal lines have been fabricated using deep UV lithography.
- Publication:
-
Annual Report
- Pub Date:
- December 1983
- Bibcode:
- 1983howu.reptR....S
- Keywords:
-
- Epitaxy;
- Fabrication;
- Field Effect Transistors;
- Lithography;
- Chromium;
- Extremely High Frequencies;
- Gallium Arsenides;
- Gates (Circuits);
- Government Procurement;
- Ion Implantation;
- Purity;
- Rates (Per Time);
- Scalers;
- Schottky Diodes;
- Space Charge;
- Submillimeter Waves;
- Ultraviolet Radiation;
- Electronics and Electrical Engineering