A new technique for high voltage power transistor
Abstract
A new v-groove etching technique has been developed for the fabrication of power transistors. This technique has been employed to obtain a NPN high voltage power transistor with excellent performance characteristics and with a maximum breakdown voltage exceeding 750 volts. Various high voltage power transistor design considerations and principal parameters are examined. Three simple etching models are proposed in order to explain the v-groove etching effect. It is found that the characteristics and experimental results are in good agreement with the designed values.
- Publication:
-
Engineering Science and Mechanics
- Pub Date:
- 1983
- Bibcode:
- 1983ensm.proc.1389L
- Keywords:
-
- Design Analysis;
- High Voltages;
- N-P-N Junctions;
- Network Synthesis;
- Power Amplifiers;
- Transistor Amplifiers;
- Charge Distribution;
- Current Density;
- Electrical Faults;
- Etching;
- Frequency Response;
- V Grooves;
- Electronics and Electrical Engineering