Stopping power of rare gases in amorphous silicon for MeV helium ions
Abstract
The stopping cross sections of argon, krypton and xenon inside amorphous silicon for alpha particle, in which the concentrations of argon, krypton and xenon were 8,7, and 4 at %, respectively, were measured by the Rutherford backscattering method in the incident energy range from 1.0 to 2.6 MeV for argon and 1.0 to 1.6 MeV for krypton and xenon. If the stopping cross section of silicon given by Ziegler is used and Bragg's rule is assumed, the obtained values of each rare gas were about 30% lower than those for gaseous state given by Ziegler in the energy region near to 1 MeV.
- Publication:
-
Charge States and Dyn. Screening of Swift Ions in Solids
- Pub Date:
- January 1983
- Bibcode:
- 1983csds.rept..101F
- Keywords:
-
- Absorption Cross Sections;
- Amorphous Silicon;
- Backscattering;
- Helium Ions;
- Spectrum Analysis;
- Stopping Power;
- Amorphous Materials;
- Argon;
- Bragg Curve;
- Krypton;
- Xenon;
- Atomic and Molecular Physics