Microwave properties of shunted tunnel junctions
Abstract
Shunted hysteresis-free tunnel junctions of Nb-Nb(x)O(y)-Pb(+)-Bi with area 10-30 sq micron, critical current less than 100 kA/sq cm, V(0) greater than 1 mV, and inductance about 500 fH are investigated under 10-92-GHz excitation. The results are presented graphically and found to indicate highly stable characteristics without special storage requirements. At 70 GHz, the junction behavior is described by a resistance model.
- Publication:
-
Zhurnal Tekhnicheskoi Fiziki
- Pub Date:
- August 1983
- Bibcode:
- 1983ZhTFi..53.1639G
- Keywords:
-
- Electron Tunneling;
- Frequency Response;
- Josephson Junctions;
- Microwave Frequencies;
- Volt-Ampere Characteristics;
- Dynamic Characteristics;
- Hysteresis;
- Millimeter Waves;
- Performance Tests;
- Electronics and Electrical Engineering