Electrical properties of heat- and radiation-resistant Al(x)Ga(1-x)As avalanche diodes
Abstract
The effects of gamma radiation and heat treatment on the electrical properties of Al(x)Ga(1-x)As Schottky diodes are studied. It is shown that at relatively low radiation doses, the quality factor drops, the thermally generated reverse current decreases, and the height of the Schottky barrier increases somewhat.
- Publication:
-
Zhurnal Tekhnicheskoi Fiziki
- Pub Date:
- August 1983
- Bibcode:
- 1983ZhTFi..53.1575K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Avalanche Diodes;
- Heat Tolerance;
- Radiation Tolerance;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Electrical Properties;
- Heat Treatment;
- Radiation Hardening;
- Thermal Stability;
- Electronics and Electrical Engineering