Photodiode matrices with minority charge carrier storage in the diode base regions

The characteristics are calculated for multielement photoreceiver cells which store minority charge carriers in the diode bases. The influence of the diode base width on the signal read-out rate and efficiency of multielement photoreceivers is considered. The maximum rate of surface recombination of minority carriers at the boundaries of the diode base regions, above which the losses in the useful signal become substantial, is estimated. It is pointed out that the main advantage of devices of this type is that they make it possible to use optimally designed photodiodes which ensure a high quantum efficiency for light signals with a wide range of wavelengths.