Analytic theory of the static domain near the gate of a field effect transistor
Abstract
An analytic model for static domains near the gates of FET transistors is proposed and the results calculated using this model are compared with those found from two-dimensional models. Expressions are derived for the distance to which the depletion region extends beyond the edge of the gate and for the voltage drop in the maximum domain field. The agreement with two-dimensional model results qualitatively good; for quantitative calculations, a more realistic approximation of the shape of the domain can be used. The model can thus be used to calculate in closed form the main parameters of static domains near transistor gates with specified parameters and contact voltages and can be used to optimize FET designs.
- Publication:
-
Zhurnal Tekhnicheskoi Fiziki
- Pub Date:
- March 1983
- Bibcode:
- 1983ZhTFi..53..592K
- Keywords:
-
- Field Effect Transistors;
- Gates (Circuits);
- Space Charge;
- Static Models;
- Electric Potential;
- Electron Density (Concentration);
- Optimization;
- Poisson Equation;
- Two Dimensional Models;
- Electronics and Electrical Engineering