Variations of optical properties between 95 and 723 K of boron doped a:Si-H films prepared by glow discharge
Abstract
The study of optical properties of boron-doped a:Si-H films shows that the boron atoms disturb the silicon matrix. Contrary to hydrogen, boron doping makes the optical gap decrease. When the measurement temperature becomes higher than the preparation temperature, irreversible variations of optical gap appear in a sense opposite to those of undoped samples. This study leads us to believe that boron doping creates an increase in the density of states in the forbidden band.
- Publication:
-
Solar Energy Materials
- Pub Date:
- December 1983
- Bibcode:
- 1983SoEnM...9..301B
- Keywords:
-
- Amorphous Semiconductors;
- Boron;
- Glow Discharges;
- Hydrogenation;
- Optical Properties;
- Silicon Films;
- Doped Crystals;
- Forbidden Bands;
- Refractivity;
- Solid-State Physics