Simple method for the determination of the minority carrier diffusion length in metal/insulator/semiconductor solar cells
Abstract
A simple method for the determination of the minority carrier diffusion length in metal/insulator/semiconductor (Schottky) solar cells is proposed. This parameter is calculated directly from the peak position of the solar cell spectral response, measured under constant-light-intensity conditions. Excellent sample-to-sample agreement within lots, as well as very good agreement with the results obtained by another technique, is apparent. Diagrams presented in this paper permit direct read-out of the diffusion length in monocrystalline silicon.
- Publication:
-
Solar Cells
- Pub Date:
- August 1983
- Bibcode:
- 1983SoCe....9..257N
- Keywords:
-
- Carrier Transport (Solid State);
- Minority Carriers;
- Mis (Semiconductors);
- Solar Cells;
- Spectral Sensitivity;
- Diffusion Coefficient;
- P-N Junctions;
- Schottky Diodes;
- Solid-State Physics