Heterojunction solid-state devices for millimeter-wave sources
Abstract
The use of compound semiconductor and heterojunction devices as millimeter-wave sources through 100 GHz has been investigated. Both IMPATT and MESFET type devices have been considered. A series of comprehensive and accurate theoretical device models have been developed and utilized in this investigation. Both equilibrium and nonequilibrium transport effects have been investigated. Prototype IMPATT device structures have been fabricated in GaAs and GaInAs/InP.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- October 1983
- Bibcode:
- 1983STIN...8417490T
- Keywords:
-
- Heterojunctions;
- Microwave Equipment;
- Millimeter Waves;
- Solid State Devices;
- Avalanche Diodes;
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Phosphides;
- Models;
- Prototypes;
- Semiconductors (Materials);
- Transport Properties;
- Electronics and Electrical Engineering