Laser chemical etching of vias in GaAs
Abstract
Rapid drilling of vias in thick wafers (381 micons) of GaAs has been achieved by a laser assisted etching process. The technique utilized a CW visible argon ion laser and an etchant gas of low pressure C12. Data on the dependence of the etch rate on the laser power, wavelength and C12 gas pressure are presented.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- June 1983
- Bibcode:
- 1983STIN...8411479T
- Keywords:
-
- Drilling;
- Etching;
- Gallium Arsenides;
- Laser Applications;
- Wafers;
- Argon Lasers;
- Chlorine;
- Gas Pressure;
- Low Pressure;
- Power Conditioning;
- Rates (Per Time);
- Lasers and Masers