A 20-GHz IMPATT diode development
Abstract
The development of 20 GHz, double drift GaAs IMPATT diodes is described. Advances made in material growth, diodes fabrication technology and packaging, and circuit design and diode testing are documented.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- June 1983
- Bibcode:
- 1983STIN...8411387M
- Keywords:
-
- Avalanche Diodes;
- Downlinking;
- Gallium Arsenides;
- Ultrahigh Frequencies;
- Chips (Electronics);
- Energy Conversion Efficiency;
- Epitaxy;
- Gallium Arsenides;
- Power Conditioning;
- Satellite Transmission;
- Wafers;
- Electronics and Electrical Engineering