Laser-controlled millimeter-wave switching, gating and phase shifting in dielectric waveguides

The results are summarized of the investigation of a number of millimeter-wave device concepts based on laser-induced solid-state plasma in a semiconducting waveguide. Using the waveguide as a phase shifter, a phase shift up to 1400 degrees/cm has been obtained. Using a Cr-doped GaAs waveguide, a millimeter-wave modulator with a bandwidth greater than 1 GHz has been demonstrated. A complete theoretical analysis has been carried out and a dynamic bridge method has been devised to measure the rapid phase change. Several experiments are suggested for future study. The ultimate goal of this research is to develop a monolithic millimeter-wave integrated circuit technology. The results of this study show that this goal is clearly achievable.