A distributed model of MOS transition for electric simulation
Abstract
The Wang MOS transistor distributed model is analyzed and improved. The number of circuits of the Wang model is optimized to enhance precision. Source and drain edge effects are included in the model. Facilities for the characterization of sample parameters are described.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- March 1983
- Bibcode:
- 1983STIN...8335305C
- Keywords:
-
- Distributed Parameter Systems;
- Mathematical Models;
- Metal Oxide Semiconductors;
- Optimization;
- Computerized Simulation;
- Edges;
- Equivalent Circuits;
- Field Effect Transistors;
- Electronics and Electrical Engineering