Reading and writing of photochemical holes using GaAlAs diode lasers
Abstract
A current tuned (gallium aluminum arsenide) diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833 nm zero phonon line of the R' color center in LiF. Applications for reading and writing data into frequency domain optical memories based on photochemical hole burning are discussed.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- February 1983
- Bibcode:
- 1983STIN...8324846P
- Keywords:
-
- Aluminum Arsenides;
- Gallium Arsenides;
- Lasers;
- Optical Memory (Data Storage);
- Photochemical Reactions;
- Color Centers;
- Cryogenics;
- Diodes;
- Openings;
- Tunable Lasers;
- Lasers and Masers