Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983, Proceedings
Abstract
Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates. For individual items see A84-20677 to A84-20743
- Publication:
-
NASA STI/Recon Technical Report A
- Pub Date:
- December 1983
- Bibcode:
- 1983STIA...8420676.
- Keywords:
-
- Circuit Protection;
- Conferences;
- Electromagnetic Pulses;
- Extraterrestrial Radiation;
- Nuclear Radiation;
- Radiation Effects;
- Spacecraft Charging;
- Charge Coupled Devices;
- Dielectrics;
- Field Effect Transistors;
- Integrated Circuits;
- Radiation Hardening;
- Random Access Memory;
- Semiconductor Devices;
- Solar Cells;
- Solid State Devices;
- Electronics and Electrical Engineering