Effect of the velocity-field peak on I V characteristics of GaAs FET's
Abstract
We have extended the standard theoretical model for junction field-effect tarnsistors to include a peak in the velocity-field curve, such as occurs for GaAs and InP. It is shown that the I-V characteristics are quite different in the two cases for low gate-bias voltages. Also, changes in the channel thickness, and in the fields, at various points in the channel, are discussed.
- Publication:
-
Solid State Electronics
- Pub Date:
- August 1983
- DOI:
- 10.1016/0038-1101(83)90047-3
- Bibcode:
- 1983SSEle..26..811C
- Keywords:
-
- Carrier Mobility;
- Carrier Transport (Solid State);
- Field Effect Transistors;
- Gallium Arsenides;
- Volt-Ampere Characteristics;
- Drift Rate;
- Electric Fields;
- Jfet;
- Saturation;
- Electronics and Electrical Engineering