Schottky barriers on single-crystal indium telluride
Abstract
Schottky barriers on single-crystal p-In 2Te 3 were formed with evaporated films of materials Al, Ag and Cu with work-functions ØM<( Eg+ xs) while Au, Ni and Pd films with larger ØM produced ohmic contacts. The barrier heights were found to be 0.72, 0.67 and 0.69 eV respectively, while the ideality factors were 1.15, 3.48 and 6.54. The interface index s was 0.16 compared with the theoretical value of 0.146, its small magnitude indicating the covalent nature of the semiconductor. Barriers on n-In 2Te 3 showed Øbn + Øbp = 1.29 eV compared with Eg = 1.12 eV. A surface-state rather than a chemical bonding theory provided a satisfactory explanation of the results.
- Publication:
-
Solid State Electronics
- Pub Date:
- August 1983
- DOI:
- 10.1016/0038-1101(83)90038-2
- Bibcode:
- 1983SSEle..26..757S
- Keywords:
-
- Carrier Transport (Solid State);
- Indium Tellurides;
- P-Type Semiconductors;
- Schottky Diodes;
- Single Crystals;
- Band Structure Of Solids;
- Electron Recombination;
- Energy Gaps (Solid State);
- Thermionic Emission;
- Electronics and Electrical Engineering