Noise measurements in ion implanted mosfets
Abstract
An example is given for 1/ f noise in MOSFETs caused by a non-uniform channel that is noisiest at the drain. The device is an ion implanted unit and therefore the noise shows generation-recombination bumps superimposed on a 1/ f noise background. A similar device shows a very shapp peak in the noise at saturation, followed by a new peak beyond saturation. The noise if the 1/ f fype with some indication of generation-recombination noise bumps at the highest drain voltage. Non-ion implanted devices do not show these effects.
- Publication:
-
Solid State Electronics
- Pub Date:
- August 1983
- DOI:
- 10.1016/0038-1101(83)90035-7
- Bibcode:
- 1983SSEle..26..747P
- Keywords:
-
- Electromagnetic Noise Measurement;
- Field Effect Transistors;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Noise Spectra;
- Volt-Ampere Characteristics;
- Carrier Mobility;
- Carrier Transport (Solid State);
- Electron Recombination;
- Random Noise;
- Saturation;
- Electronics and Electrical Engineering