Constant voltage scaling of FETs for high frequency and high power applications
Abstract
A constant voltage scaling scheme is examined for the enhancement of frequency and power performance of FETs. For low electric fields, this scheme is self-consistent within Shockley's formulation and improves the overall frequency and power performance figure of merit by a factor of κ6 with a κ times reduction in the device area. For high electric fields, the improvement is reduced to κ3 times due to the velocity saturation effect. Reduced breakdown voltage further limit the improvement.
- Publication:
-
Solid State Electronics
- Pub Date:
- July 1983
- DOI:
- 10.1016/0038-1101(83)90022-9
- Bibcode:
- 1983SSEle..26..667C
- Keywords:
-
- Electric Potential;
- Electrical Faults;
- Field Effect Transistors;
- Electric Fields;
- Figure Of Merit;
- Power Efficiency;
- Scaling;
- Electronics and Electrical Engineering