A correlation of atomic and electrical measurements of Cr and residual donors in thermally processed semi-insulating GaAs
Abstract
Chronium redistribution resulting in residual donor decompensation has been proposed to explain near-surface type-conversion in furnace-annealed, semi-insulating GaAs. We report here correlations of Cr depth profiles and residual donor atom densities determined by SIMS with Hall effect and C-V electrical measurements of carrier densities which substantiate the above hypothesis. Furthermore, a 1:1 Cr-to-donor compensation ratio iis observed for Cr doping levels of ~ 10 17 cm -3.
- Publication:
-
Solid State Electronics
- Pub Date:
- June 1983
- DOI:
- 10.1016/0038-1101(83)90172-7
- Bibcode:
- 1983SSEle..26..565V
- Keywords:
-
- Carrier Density (Solid State);
- Chromium;
- Donor Materials;
- Gallium Arsenides;
- Hall Effect;
- Annealing;
- Carrier Mobility;
- Doped Crystals;
- Volt-Ampere Characteristics;
- Solid-State Physics