Hopping conductivity and weak localization in two-dimensional disordered systems
Abstract
The low temperature dependence of hopping conductivity σ( T) in 2 d-DS with weak localization of electron states is investigated. Hopping between neighbouring localized states is suggested and a power law for σ( T) is obtained. Coulomb effects are shown to be negligible for this process. The transition from the logarithmic T dependence and to the exponential Mott's law is discussed. The density distribution of localized electron states is proved to be exponential. The dielectric permeability ɛ'(ω) is found to be proportional to |ω| -1 in the field of validity of the logarithmic corrections.
- Publication:
-
Solid State Communications
- Pub Date:
- May 1983
- DOI:
- 10.1016/0038-1098(83)90579-3
- Bibcode:
- 1983SSCom..46..469G