Integrated photoreceivers for long wavelength communications systems - Is the technology ready?
Abstract
The development of integrated pin photodiode/FET receivers based on In(0.53)Ga(0.47)As lattice-matched to InP is reviewed. The potential for application of such devices for fiber-optics communications systems in the 1.3-1.5-micron spectral band is indicated. The 0.75-eV bandgap energy and electron-transport properties of InGaAs make it suitable as a photodiode and an FET material, respectively. The design implications of specific properties are discussed in detail and presented in tables and graphs. While no integrated device is yet competitive with hybrid circuits, a prototype using a JFET gate structure with 4-micron length, n-layer doping of 2 x 10 to the 16th/cu cm, and transconductance of 40 mS/mm has been found to give a gain of about 300 for a gate-load resistor of 7 kiloohms, corresponding to a gain-bandwidth product of about 20 MHz.
- Publication:
-
Integrated optics III
- Pub Date:
- January 1983
- DOI:
- 10.1117/12.935714
- Bibcode:
- 1983SPIE..408..115L
- Keywords:
-
- Fiber Optics;
- Integrated Optics;
- Optical Communication;
- Photonics;
- Technology Assessment;
- Energy Gaps (Solid State);
- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Indium Phosphides;
- Jfet;
- Optical Waveguides;
- Photodiodes;
- Optics