Investigation of the effect of the increase of the maximum generation frequency of Gunn diodes

Theoretical and experimental results are presented on the increase of the maximum generation frequency of Gunn diodes with intervalley electron transfer in a wide range of temperatures and frequencies. The frequency dependence of generation efficiency (in the range of frequencies from below 10 GHz to approximately 180 GHz) for n-GaAs at lattice temperatures of 300 and 500 K was calculated on the basis of the solution of the Boltzmann equation, with allowance for the scattering of electrons by acoustic, polar, and nonpolar optical, intervalley, and intravalley phonons. A certain disagreement is noted between theoretical results and experimental results obtained for one harmonic and two harmonics in the CW regime. This discrepancy can be partly explained by the fact that the calculations assumed an ideal LSA regime.