Technique for junction depth measurement of silicon solar cells
Abstract
A new technique for junction depth measurements of silicon solar cells is described. The technique essentially consists of repeated anodization and etching of the surface layer followed by electrical measurements. The advantages of the technique are discussed and illustrative results are presented.
- Publication:
-
Review of Scientific Instruments
- Pub Date:
- November 1983
- DOI:
- 10.1063/1.1137270
- Bibcode:
- 1983RScI...54.1580B
- Keywords:
-
- Depth Measurement;
- P-N Junctions;
- Silicon Junctions;
- Solar Cells;
- Anodizing;
- Electrical Measurement;
- Energy Technology;
- Error Analysis;
- Etching;
- Fabrication;
- Surface Layers;
- Electronics and Electrical Engineering