A simple method to determine series resistance and k factor of an MOS field effect transistor

A simple method to determine the parasitic source/drain series resistance and k factor of MOSFET's is presented. The parasitic source/drain series resistance and the k factor of a MOSFET can be determined by measuring the dc drain current of the device operated in the linear region under moderate gate biases. The results also showed that the mobility of electrons or holes in the surface inversion layer is practically independent of gate bias voltage.