Modeling of the signal and noise behavior of junction field-effect transistors in the saturation region

A basic study regarding the principles of operation of the junction field-effect transistor (PN-FET) was conducted by Shockley (1952). At high field intensities, which in particular can occur in transistors of small dimensions, the mobility of electrons decreases, however, and a saturation of the current occurs. As this phenomenon is not predicted by the Shockley model, a number of studies were conducted with the aim to explain the processes in the saturation region by means of a suitable model. Van Vliet et al. (1975) have provided a survey of methods concerned with the noise in single injection diodes. However, procedures considered by Pucel et al. (1975) for the calculation of diffusion noise cannot be related to any of the approaches listed by Van Vliet et al. The present investigation is concerned with a calculation of the diffusion noise of the PN-FET in the saturation region on the basis of a model reported by Grebene and Ghandhi (1969).