Modeling and characterization of nonuniform-profile GaAs FETs

An analyatical model of GaAs FETs with a nonuniform doping profiles is developed and validated. The physical principles of this type of device are reviewed; the ion-implantation fabrication process is described; and the previous analytical models are classified and discussed. In the new model proposed, both numerical and analytical techniques are applied to calculate the static and dynamic small-signal properties, taking Debye length, edge effects, and overshoot velocity into account. This model is intended to facilitate the optimization of implantation conditions and the computer-aided design of multicomponent integrated devices. Experimental measurements of doping, mobility, and static and dynamic performance up to 12 GHz are included, and the program instructions are printed out in an appendix.