The manufacture and inspection of avalanche transit time diodes and oscillators for V- and W-band frequencies

The present investigation is concerned with the manufacture of silicon single-drift avalanche transit time diodes, taking into account incorporation technology and the employed resonator for V- and W-band frequencies. The diodes are characterized on the basis of measurements of the thermal impedance, the radio-frequency power, the efficiency, and the noise properties. The development of a suitable mounting technology makes it possible to manufacture diodes on diamond heat sinks with very low thermal impedance values. The frequency noise characteristics of the manufactured N(+)PP(+)and P(+)NN(+)-diodes are studied at a frequency of 94 GHz. Attention is given to the principles of operation of avalanche transit time diodes, details regarding the manufacture of avalanche transit time diodes, aspects of oscillator design, a theoretical model of the oscillator, and the experimental results.